Semiconductor wafer manufacturing method and apparatus for an improved heat exchanger for a photoresist developer

ABSTRACT

Embodiments of the invention comprise a new device and technique to realize an improved temperature control for a chemical photoresist developer utilizing a preexisting integrated single reservoir. This improvement is achieved by providing for a modified temperature control unit and procedure. The temperature control unit preferably comprises a plurality of heat exchanger conduits that are each supplied by an inlet manifold, and then exhausted via an outlet manifold. The temperature control unit preferably extends fully within the modified nozzle unit. By utilizing the improved temperature control unit, a first and second volumetric allocation of developer may be issued so that both may be dispensed within a relatively short period of time upon a photoresist layer surface in a temperature controlled state.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] The present application is related to the following commonlyassigned applications filed concurrently herewith: “Semiconductor WaferManufacturing Method and Apparatus To Improve A Developer TemperatureProfile”, application Ser. No. ______; “Semiconductor WaferManufacturing Method And Apparatus For An Improved Heat Exchanger. For APhotoresist Developer”, application Ser. No. ______; and “SemiconductorWafer Manufacturing Method and Apparatus To Improve A DeveloperTemperature Profile Utilizing An Improved Heat Exchanger For An ImprovedDeveloper Temperature Profile Photoresist Developer”, application Ser.No. ______.

BACKGROUND OF THE INVENTION

[0002] The present invention relates generally to a method and apparatusfor manufacturing a semiconductor integrated circuit (“IC”). Morespecifically, this invention relates to an improved method and apparatusfor the dispensing of a plurality of allocations of a photoresistdeveloper while maintaining an improved temperature profile.

DESCRIPTION OF THE PRIOR ART

[0003] The present invention applies particularly to the fabrication ofsemiconductor integrated circuits. Some examples of these semiconductorintegrated circuits comprise non-volatile memory integrated circuits.Non-volatile memory integrated circuits include an EPROM, an EEPROM, aflash memory device, and a complementary metal oxide silicon (“CMOS”)type device. Exemplary devices may comprise field-effect transistors(“FET”) containing a metal gate over thermal oxide over silicon(“MOSFET”), as well as other ultra-large-scale integrated-circuit(“ULSI”) systems.

[0004] Integrated circuits are utilized in a wide variety of commercialand military electronic devices, including, e.g., hand held telephones,radios and digital cameras. The market for these electronic devicescontinues to demand devices with a lower voltage, a lower powerconsumption and a decreased chip size. Also, the demand for greaterfunctionality is driving the “design rule” lower, for example, into thesub-half micron range. The sub-half micron range may comprise, e.g.,decreasing from a 0.35-0.25 micron technology to a 0.18 micron or a 0.15micron technology, or even lower.

[0005] These integrated circuit devices are generally fabricated ingroups on a semiconductor wafer. A portion of this fabrication involvesutilizing a photolithography process to pattern the semiconductor wafer.This photolithography process is conventionally utilized in asemiconductor wafer production.

[0006] Specifically, in a portion of the photolithography of thesewafers, a photoresist coater and developer system is utilized in thepatterning of various layers of the wafer that will form the circuitdevice. The photoresist coater and developer system applies, or coats, alight-sensitive resin, i.e., a photoresist layer, to wafers bydepositing a pre-selected amount of the photoresist solution. Next, thesystem spins the wafers at a relatively high rate of speed to distributethe photoresist into a relatively even coating over the wafer. Then, thewafers are baked to induce a volatilization of a casting solvent in thephotoresist. Next, the wafers are exposed to a light source, e.g., adeep ultraviolet (“DUV”) light source, for patterning. The exposedwafers are baked and then developed by a chemical treatment, and areagain baked to dry the wafers.

[0007] Conventional examples of resist coater and developer systems,e.g., are the Tokyo Electron Limited (TEL) sub-half micron compatibleCoater/Developer Clean Track systems. Conventional systems includesystems that utilize a chemically amplified resist (“CAR”) in the deepultraviolet (“DUV”) process that has been adopted for the sub-halfmicron design rule type of circuit devices.

[0008] As to the development of the photoresist that has been formed onthe wafer, conventionally, a chemical developer is utilized to removeareas defined in the steps of masking and exposure of the photoresistlayer that has been deposited on the wafer. The development of thephotoresist is an important part of the wafer fabrication.

[0009] For example, in sub-half micron semiconductor processing, one ofthe most important parameters in the photolithography area is thecritical dimension (“CD”). The above described relatively complexintegrated circuits will only function as designed if the criticaldimensions are within specification. There are many parameters thatcontrol the critical dimension. One of these parameters comprises thetemperature of the photoresist chemical developer solution when thewafer is being developed.

[0010]FIG. 1 illustrates a conventional photoresist chemical developersolution dispensing apparatus, or nozzle assembly 10. The nozzleassembly 10 includes a nozzle unit 30 that is connected to a nozzle cap40 by utilizing fastening devices, e.g., nuts and bolts, that are notshown. The fastening devices first pass through the fastening holes 24,starting from a lower surface of the nut plate 22, then through thefastening holes 34 of the nozzle unit 30, and finally through thefastening holes 44 of the nozzle cap 40. In order to seal the nozzleassembly 10, an O ring 60 is provided between the nozzle cap 40 and atop interior recessed groove 31 of the nozzle unit 30.

[0011] Although not shown, a plurality of nozzle ports 28 for dispensinga chemical developer solution are located on a lower portion orunderside of the nozzle unit 30. The chemical developer is introducedinto the nozzle assembly 10 through one or more input ports 46 of thenozzle cap 40.

[0012] A temperature control unit 300, that includes a heating coilcomprising a single ⅜ inch diameter heat exchanger tube 302, iscentrally placed within the nozzle unit interior 38. This heat exchangertube 302 carries a temperature control liquid within an interior sealedportion of this heat exchanger tube 302. Suitable temperature controlunit input and output ports 304, 306, are respectively provided totransport the temperature controlled fluid into the interior sealedportion of the heat exchanger tube 302. The conventional temperaturecontrol liquid then achieves a thermal equilibrium with the allocationof chemical developer that has just been introduced, via the input ports46, into the nozzle unit interior 38 of the nozzle unit 30. Alsoprovided is an air bleed port 46A that is routed to a drain and may beutilized when introducing the developer.

[0013] By providing this close physical association between thetemperature control unit and the chemical developer nozzle ports 28, arelatively strict or precise temperature control of a single developerallocation is achieved. For example, the developer may be supplied tothe nozzle unit interior 38 at a temperature that is approximately 2-5°C. different, e.g., lower, than the desired control temperature, e.g.,of approximately 23° C. Also, the developer may be supplied to thenozzle unit interior 38 at a greater than 5° C. temperature differencethan the desired control temperature. The temperature control of thechemical developer solution is provided until it is dispensed ordeposited by the nozzle ports 28 onto the wafer 220, as is shown inFIGS. 2A-B.

[0014] In FIG. 2A, a conventional photoresist coating and developingsystem is shown. FIGS. 2A-B illustrate a technique that isconventionally referred to as a puddle procedure.

[0015] Specifically, the puddle process comprises the followingtechnique that is illustrated by a conventional single wafer spray unit.In FIG. 2A, the semiconductor wafer 220 is held upon a rotatable tableor track chuck 200. First, the wafer 220 is spun utilizing the chuck200. A first allocation of the photoresist developer 235 is dispensedthrough the nozzle ports 28 to an upper surface of the wafer 220 thatfurther comprises a photoresist layer 234 that has been patterned andexposed by light. While the temperature controlled chemical developer235 is being dispensed, the wafer 220 is spun at a relatively low numberof revolutions per minute (“RPM”). The chemical developer 235 is nowutilized to cure the photoresist.

[0016] The spinning of the wafer 220 is then stopped, as shown in FIG.2B. The first allocation of the chemical developer 235 has beendeposited by the nozzle ports 28 so as to cover the photoresist uppersurface. Surface tension now holds the developer 235 on the wafer 220 soas to form a puddle 237. The puddle 237 of developer 235 then sits uponthe surface of the wafer 220 for a specified or required period of time.For example, a specified sit time of 23 seconds may be utilized. Thus,in essence, this puddle technique provides for a single wafertopside-only immersion process.

[0017] When the specified sit time has expired, the wafer 220 is againspun at a relatively low RPM while a second allocation of the developer235 is dispensed by the nozzle ports 28 onto the wafer 220. Again, thewafer spinning is stopped and is again allowed to sit with a puddle 237of the second allocation of developer 235 on the top surface of thewafer 220, e.g., for a sit time of approximately another 23seconds.

[0018] Finally, the wafer 220 is spun at a relatively high RPM whilerinsing with water. After rinsing, the wafer 220 is dried and passed onto the next step. It is understood that the rinsing and drying portionsof the developing process are not illustrated in FIGS. 2A-B. The nextwafer is then processed through the development station.

[0019] The above first and second allocations and sit times of thedeveloper 235 comprise a double puddle technique. Each new wafer isprocessed through this double puddle development in about 2.5 minutes.This allows enough time for the first allocation of developer 235 toreach thermal equilibrium with the heating unit in the nozzle unit 30,and thus achieve a temperature control of the developer prior todispensation.

[0020] The conventional nozzle unit 30 temperature controlsapproximately 60 cubic centimeters (cc's) of developer at any giventime, once the developer reaches thermal equilibrium with the heatingunit. However, the first allocation of the dispensed temperaturecontrolled chemical developer 235 utilizes approximately most or all ofthis 60 cc volume.

[0021] It takes approximately 1.5 seconds to dispense the approximately60 cc's of chemical developer 235 solution through the nozzle ports 28at the maximum rate. However, the delivery time span of this firstallocation by the nozzle ports 28 varies, depending upon the processselected and the type of photoresist and/or developer utilized. Aconventional developer delivery time span may occur over, e.g., about1.5 to 3.5 seconds.

[0022] Conventionally, the second allocation of developer is then inputthrough the input ports 46 to the nozzle unit interior 38 just after thedispensation of the first allocation of the chemical developer. Due tothe time required for filling the nozzle unit interior 38 with thesecond allocation of developer there is even less time, than theapproximately 23 seconds of sit time, for the second allocation ofdeveloper to attempt to reach a temperature controlled state. In fact,the approximately 23 seconds of sit time is not adequate for the secondallocation of developer to achieve the desired temperature control ofapproximately 23° C. prior to dispensation. Conventionally, in thedouble puddle technique, when the second allocation of chemicaldeveloper is applied to the same wafer, the chemical developer has notachieved equilibrium with the temperature control unit, and is thus notadequately temperature controlled at dispensation.

[0023] Thus, a problem exists when the delivery of more than onetemperature controlled chemical developer allocation is desired for thesame wafer, as is the case in the above double puddle technique. Thisfailure to temperature control the second allocation results in agreater difficulty in achieving the critical dimensions required.

[0024] What is needed is a device and method for improving the abilityto develop a photoresist layer with a temperature controlled developerthat is utilized in a double puddle technique.

SUMMARY OF THE INVENTION

[0025] Embodiments of the present invention are best understood byexamining the detailed description and the appended claims withreference to the drawings. However, a brief summary of embodiments ofthe present invention follows.

[0026] Briefly described, an embodiment of the present inventioncomprises a device and a method that provides for an improvedtemperature control for a chemical photoresist developer. Thisimprovement is achieved by providing for a modified heat exchanger and amodified nozzle assembly and procedure.

[0027] The modified heat exchanger assembly preferably comprises aplurality of heat exchanger tubes. The heat exchanger tubes are providedwith a temperature control liquid via an input port to the heatexchanger assembly. The heat exchanger assembly then preferably utilizesa manifold device to distribute the temperature control liquid from theinput port to the plurality of heat exchanger tubes. After thetemperature control liquid passes through each of the plurality of heatexchanger tubes, the temperature control liquid is then collected fromeach of the plurality of heat exchanger tubes in an exhaust manifold,where the temperature control liquid is then exhausted via a temperaturecontrol output port. Each of the plurality of heat exchanger tubes arepreferably held in place by one or more shaping clips.

[0028] The modified nozzle assembly preferably comprises inserting atemperature extension unit between a nozzle unit and a nozzle cap of aconventional nozzle assembly. By adding the temperature extension unit,a first volumetric allocation of developer may be combined with a secondvolumetric allocation of developer so that both may be dispensed withina relatively short period of time upon a photoresist layer surface in atemperature controlled state. By combining the first and secondvolumetric allocations of developer, both allocations may be adequatelytemperature controlled prior to the dispensation of the firstallocation. At this point, the second allocation is thus already in atemperature controlled state, so that the second allocation is availablewhen needed to be dispensed as the second portion of a double puddledevelopment technique. By providing for temperature controlled first andsecond volumetric allocations of developer in a double puddlefabrication technique, the critical dimensions of a semiconductorintegrated circuit device may be achieved.

[0029] Other arrangements and modifications will be understood byexamining the detailed description and the appended claims withreference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Embodiments of the present invention are described in detailherein with reference to the drawings in which:

[0031]FIG. 1 illustrates an exploded view of a portion of a conventionalnozzle that is utilized in the fabrication of an integrated circuitdevice;

[0032]FIG. 2A illustrates a portion of a nozzle and wafer during a sprayand rotation phase that is utilized in the fabrication of an integratedcircuit device;

[0033]FIG. 2B illustrates a portion of a nozzle and wafer during apuddle phase that is utilized in the fabrication of an integratedcircuit device;

[0034]FIG. 3 illustrates an exploded view of a portion of a nozzle thatis utilized in the fabrication of an integrated circuit device, inaccordance with the principles of an embodiment of the presentinvention;

[0035]FIG. 4A illustrates a portion of a nozzle and wafer during a sprayand rotation phase that is utilized in the fabrication of an integratedcircuit device, in accordance with the principles of an embodiment ofthe present invention;

[0036]FIG. 4B illustrates a portion of a nozzle and wafer during apuddle phase that is utilized in the fabrication of an integratedcircuit device, in accordance with the principles of an embodiment ofthe present invention;

[0037]FIG. 5 illustrates a side view of a portion of a heat exchangertube assembly of FIG. 3 that is utilized in the fabrication of anintegrated circuit device, in accordance with the principles of anembodiment of the present invention;

[0038]FIG. 6 illustrates a top view of a portion of a heat exchangertube assembly of FIG. 3 that is utilized in the fabrication of anintegrated circuit device, in accordance with the principles of anembodiment of the present invention;

[0039]FIG. 7 illustrates an exploded view of a portion of a nozzle thatis utilized in the fabrication of an integrated circuit device, inaccordance with the principles of an embodiment of the presentinvention;

[0040]FIG. 8 illustrates a side view of a portion of a heat exchangertube assembly of FIG. 7 that is utilized in the fabrication of anintegrated circuit device, in accordance with the principles of anembodiment of the present invention;

[0041]FIG. 9 illustrates a top view of a portion of a heat exchangertube assembly of FIG. 7 that is utilized in the fabrication of anintegrated circuit device, in accordance with the principles of anembodiment of the present invention; and

[0042]FIG. 10 illustrates a cross-sectional view of a portion of a heatexchanger tube assembly of FIG. 9, that is taken along line 10-10, andthat is utilized in the fabrication of an integrated circuit device, inaccordance with the principles of an embodiment of the presentinvention.

[0043] The accompanying drawings, wherein like numerals denote likeelements, are incorporated into and constitute a part of thespecification, and illustrate presently preferred exemplary embodimentsof the invention. However, it is understood that the drawings are forthe purpose of illustration only, and are not intended as a definitionof the limits of the invention. Thus, the drawings, together with thegeneral description given above, and the detailed description of thepreferred embodiments given below, together with the appended claims,serve to explain the principles of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0044] An embodiment of the present invention is illustrated utilizing aphotoresist coater and developer system. Exemplary coater and developersystems may comprise, for example, Tokyo Electron Limited (“TEL”) Trackmodels, such as the TEL MARK VII, the TEL MARK VIII, and the TEL ACT 8models. These exemplary systems include systems that utilize achemically amplified resist (“CAR”) in the deep ultraviolet (“DUV”)process that has been adopted for the sub-half micron design rule typecircuit devices.

[0045] Specifically, FIG. 3 illustrates an exemplary embodiment of thepresent invention that comprises an improved nozzle assembly 100 that isadaptable to a TEL MARK VIII E2 nozzle assembly. FIGS. 4A-B illustrate adouble puddle chemical developer deposition technique for developing asemiconductor wafer. FIGS. 5-6 illustrate an arrangement of a heatexchanger assembly 320 that is utilized with the improved nozzleassembly 100 as shown in FIG. 3.

[0046] An example of integrated circuits that embodiments of the presentinvention may be utilized with are non-volatile memory integratedcircuits. Also, as is clear from the detailed description herein,together with the drawings, embodiments of the present invention may beutilized with, e.g., current CMOS fabrication processes.

[0047] FIGS. 3-6 illustrate various techniques in the practice of anembodiment of the present invention. It will be understood by oneskilled in the art that various components of the present invention asillustrated in FIGS. 3-6 are not shown in order to simplify theillustrations. Specifically, a portion of a photolithography fabricationprocess that is utilized to pattern a semiconductor wafer is describedbelow.

[0048]FIG. 3 illustrates an embodiment of the present invention thatcomprises a photoresist chemical developer solution dispensing apparatusor nozzle assembly 100. The nozzle assembly 100 comprises a nozzle unit30, a nozzle cap 40, and a temperature extension unit 50 that isprovided between the nozzle cap 40 and the nozzle unit 30. Thetemperature extension unit 50 comprises a resilient material, e.g., suchas Teflon.® The nozzle unit 30, nozzle cap 40, and temperature extensionunit 50 are physically connected together by utilizing fasteningdevices, e.g., nuts and bolts, that are not shown. The fastening devicesfirst pass through the fastening holes 24, starting from a lower surfaceof the nut plate 22, then through the fastening holes 34 of the nozzleunit 30, through the fastening holes 54 of the temperature extensionunit 50, and finally through the fastening holes 44 of the nozzle cap40.

[0049] In order to seal the nozzle assembly 100, a first O ring 60 isprovided between the temperature extension unit 50 and the top interiorrecessed groove 31 of the nozzle unit 30. Also, a second O ring 62 isprovided between the temperature extension unit 50 and the nozzle cap40.

[0050] Although not shown, a plurality of nozzle ports 28 for dispensinga photoresist chemical developer solution are located on a lower portionor underside of the nozzle unit 30. The chemical developer is introducedinto the nozzle assembly 100 through one or more input ports 46 of thenozzle cap 40.

[0051] As shown in FIG. 3, a temperature control unit 300, e.g., a heatexchanger tube assembly 320 is placed within thee nozzle unit interior38. This heat exchanger assembly 320 carries a temperature controlliquid within an interior sealed portion of this heat exchanger tubeassembly 320. Thus, the developer temperature is controlled by thetemperature control unit 300 by utilizing this heat exchanger tubeassembly 320 in contact with the developer.

[0052] As shown in more detail in FIGS. 5 and 6, the heat exchanger tubeassembly 320 preferably comprises a plurality of heat exchanger tubes302A-D. Specifically, the heat exchanger tube assembly 320, as shown inFIGS. 5-6, comprises four separate heat exchanger tubes 302A-D. Each ofthe plurality of heat exchanger tubes 302A-D preferably comprise anapproximately ⅛ inch diameter tubing. The tubing, for example, maycomprise a Teflon®-like material.

[0053] Suitable temperature control unit input and output ports 304,306, are respectively provided to transport the temperature controlledfluid into the heat exchanger tube assembly 320. The temperature controlliquid achieves a thermal equilibrium with the allocation of chemicaldeveloper that has just been introduced via the developer input ports46, into the nozzle unit interior 38 of the nozzle unit 30, as well asthe temperature extension unit 50. Also provided is an air bleed port46A that is routed to a drain that is not shown. The air bleed port 46Ais utilized, e.g., when first introducing the developer.

[0054] As shown in FIGS. 5-6, the temperature controlled fluid inputport 304 provides the temperature controlled fluid to an input manifold340. The input manifold 340 distributes the temperature controlled fluidamong the four heat exchanger tubes 302A-D. Each heat exchanger tube302A-D then provides a unique or separate path, as shown in FIGS. 5 and6 from the input manifold 340 to the output manifold 360. The outputmanifold 360 collects the temperature controlled fluid from each of thefour heat exchanger tubes 302A-D and then exhausts the temperaturecontrolled fluid via the output port 306.

[0055] As shown in FIGS. 5-6, the heat exchanger tube assembly 320 iscontained within both the nozzle unit 30, and the temperature extensionunit 50. This improved heat exchanger assembly 320 thus may achieve animproved temperature control of the chemical developer locatedessentially throughout the entire cavity formed by the interior of thenozzle unit 30 and the temperature extension unit 50. For example, amore effective temperature control is provided to the chemical developerthan would be possible by utilizing the heat exchanger tube 302 of FIG.1 in combination with the temperature extension unit 50. Thus, a moreeffective temperature control may be achieved by utilizing the improvedheat exchanger tube assembly 320 in combination with the temperatureextension unit 50 than might be achieved by utilizing the temperatureextension unit 50 alone.

[0056] It is also understood that the heat exchanger tube assembly 320provides for an improved temperature control of the chemical developeras compared to the prior art heat exchanger tube 302 of FIG. 1. In anembodiment of the present invention, for example, by utilizing a smallerdiameter tube with a substantially longer length between the input andoutput ports 304, 306, an increased surface area contact between theheat exchanger tube surfaces and the chemical developer is achieved.Thus, embodiments of the present invention may achieve thermalequilibrium more rapidly than was possible in the prior art as shown inFIG. 1.

[0057] Also, thermal equilibrium may be achieved more rapidly byextending the heat exchanger, as shown in FIGS. 5-6, into thetemperature extension unit 50 so as to provide an improved temperaturecontrol of the chemical developer in both the nozzle unit 30, as well asthe temperature extension unit 50 as illustrated in FIGS. 4-6.

[0058] Also as shown in FIGS. 5-6, a shaping clip 390 is utilized toprovide a relative separation of the plurality of heat exchanger tubes302A-D. As shown in FIGS. 5-6, the same shaping clip 390 may also beutilized to provide both a horizontal separation between the pluralityof heat exchanger tubes 302A-D, and a vertical separation between themultiple loops of a specific heat exchanger tube, for example, heatexchanger tube 302A as shown in FIG. 5.

[0059] Alternately, a plurality of shaping clips 390 may be utilized toprovide either or both the horizontal and vertical separation. Thehorizontal and vertical separation may alternatively be accomplished byutilizing separate shaping clips, or similar devices. The shaping clip390 may comprise, for example, a molded plastic clip-like device.

[0060] By providing this close physical association between thetemperature control unit and the chemical developer nozzle ports 28, arelatively strict or precise temperature control of both the first andsecond developer allocations is achieved. The temperature control of thechemical developer is provided until it is dispensed or deposited by thenozzle ports 28 onto the wafer 220, as is shown in FIGS. 4A-B.

[0061] In FIG. 4A, a photoresist coating and developing system thatutilizes a double puddle technique is shown. Specifically, a doublepuddle process that is utilized in the practice of an embodiment of thepresent invention comprises the following technique that is illustratedby a single wafer spray unit.

[0062] In FIG. 4A, the semiconductor wafer 220 is held upon a rotatabletable or track chuck 200. First, the wafer 220 is spun utilizing thechuck 200. A first volumetric allocation of the temperature controlledphotoresist chemical developer 236 is dispensed through the nozzle ports28 to an upper surface of the wafer 220 that further comprises aphotoresist layer 234 that has been patterned and exposed by light.While the temperature controlled chemical developer 236 is beingdispensed, the wafer 220 is spun at a relatively low RPM. The chemicaldeveloper 236 is now utilized to cure the photoresist.

[0063] The spinning of the wafer 220 is then stopped, as shown in FIG.4B. The first allocation of the chemical developer 236 has beendeposited by the nozzle ports 28 so as to cover the photoresist uppersurface. Surface tension now holds the developer 236 on the wafer 220 soas to form a puddle 238. The puddle 238 of developer 236 then sits uponthe surface of the wafer 220 for a first specified or required period oftime. For example, a first specified sit time of approximately 23seconds may be utilized. This sit time may vary depending upon the typeof photoresist and/or developer utilized and/or the size of the wafer tobe developed. For example, each sit time may vary from about 15 secondsto about 30 seconds or more.

[0064] When the first specified sit time has expired, the wafer 220 isagain spun at a relatively low RPM while a second volumetric allocationof the temperature controlled developer 236 is dispensed by the nozzleports 28 onto the wafer 220. Again, the wafer spinning is stopped andthe wafer 220 is again allowed to sit with a puddle 238 of the secondallocation of developer 236, e.g., for a second sit time ofapproximately another 23 seconds. Again, e.g., each sit time may varyfrom about 15 seconds to about 30 seconds or more.

[0065] Finally, the wafer 220 is spun at a relatively high RPM whilerinsing, e.g., with water. After rinsing, the wafer 220 is dried andpassed on to the next step. It is understood that the rinsing and dryingportions of the developing process are not illustrated in FIGS. 4A-B.Also, it is understood that the chuck 200 may be utilized to heat thewafer 220 in each of the above puddle steps, thereby either acceleratingor causing the development of the photoresist to take place. The nextwafer is then processed through the development station.

[0066] The above described first and second allocations and sit times ofthe developer 236 comprise a preferred double puddle technique. Each newwafer is processed through this double puddle development in about twoto three minutes, e.g. 2.5 minutes.

[0067] Volumetrically, the improved nozzle assembly 100, that comprisesthe nozzle unit 30 and the temperature extension unit 50, temperaturecontrols approximately 120 cubic centimeters (cc's) of developer at anygiven time, once the developer reaches an approximate thermalequilibrium with the heating unit. The first allocation of thetemperature controlled chemical developer 236 utilizes approximatelyone-half of this 120 cc volume. Also, prior to the first dispensing, thesecond allocation of the temperature controlled chemical developer 236utilizes approximately the remaining one-half of this 120 cc volume thatis contained in the improved nozzle assembly 100. Because bothallocations of developer 236 are able to achieve an approximate thermalequilibrium with the heating unit in the nozzle assembly 100 prior todispensation of the first allocation, the first and second allocationsof developer 236 are initially both optimally temperature controlled.

[0068] Further, after the first dispensation but prior to the seconddispensation, the second allocation is now also able to achieve anadequate temperature control prior to dispensation. Specifically, as thefirst allocation is dispensed, the volume of developer that is beingdispensed is constantly being replaced with an equivalent volume ofdeveloper via the input ports 46, as shown in FIG. 3. This volumetricreplacement occurs because the developer is under a constant pressure.This constant volumetric replacement causes a significant amount of thesecond 60 cc portion of the initially temperature controlled developerto tend to move towards the nozzles, so as to replace the first portionof developer that is being dispensed. Similarly, as the second portionor allocation moves toward the nozzles, it is also, in turn,volumetrically replaced with non-temperature controlled developersupplied via the input ports 46.

[0069] Thus, at least a portion of the second 60 cc allocation, that wastemperature controlled prior to the first dispensing, is essentiallymoved closer to the nozzle ports. In other words, the next or secondportion of developer that will be dispensed has moved to and isprimarily located nearest the nozzle ports, after the first dispensinghas been completed. Because a significant portion of this next 60 ccvolume to be dispensed has already been temperature controlled once, itrequires less time for the 60 cc portion nearest the nozzle ports toreach an adequately temperature controlled state. This adequatelytemperature controlled state may comprise a temperature of approximately2320 C., or at least a temperature that is close enough to approximately23° C., so that the developer performance is improved, as compared tothe conventional apparatus and method previously described.

[0070] Thus, the time required before the second allocation ofapproximately 60 cc can be dispensed in an adequate temperaturecontrolled state is reduced. Generally, an adequately temperaturecontrolled second allocation of developer may be made available fordispensing within the desired time frame of approximately 23 seconds.

[0071] Further, some of the various embodiments of the present inventioncomprise an improved heat exchanger. In these embodiments, a temperaturecontrol of, e.g., a 60 cc potion of developer may be more easilyachieved, and in substantially less time that the currently desired timeframe of approximately 23 seconds.

[0072] Also, various embodiments of the present invention comprise animproved heat exchanger, and also may comprise, e.g., a 180 cctemperature extension unit, preferably with a heat exchanger of thepresent invention fully extended beyond the existing nozzle unit 30, soas to also be fully within the 180 cc temperature extension unit,similar to the embodiment illustrated in FIGS. 5-6. In theseembodiments, a temperature control of, e.g., a 120 cc portion ofdeveloper may be more easily achieved, and may alternatively be achievedwithin the currently desired time frame of approximately 23 seconds, orin even less time. This is particularly beneficial for processing wafersthat are larger that the currently preferred 8 inch diameter wafers,because more developer is required as the diameter of the wafer to bedeveloped is increased. Thus, various embodiments of the presentinvention may be utilized to process substantially larger diameterwafers, e.g., approximately 9, 10, 11, 12, 13, 14, 15, or 16 inchdiameter wafers, or even larger wafers.

[0073] As illustrated in FIGS. 4-6, the improved nozzle assembly 100thus allows for the delivery of more than one portion of the temperaturecontrolled chemical developer allocation for the same wafer, as isillustrated in the above double puddle technique. This achievement oftemperature control of the second allocation of developer results in agreater ability to achieve the critical dimensions required.

[0074] For example, the first allocation of developer is dispensed in atemperature controlled manner. However, after developing or “sitting”for a short period of time, the developer tends to “wear out.” Thus, inorder to achieve the sub-half micron dimensions of the semiconductorintegrated circuit device, a second puddle of temperature controlleddeveloper is applied, relatively soon after the first temperaturecontrolled puddle. By adequately temperature controlling the seconddeveloper puddle deposition, the critical dimensions may be more easilyachieved because of an improved quality of the actions of the seconddeveloper puddle.

[0075] Thus, the temperature control required to achieve the criticaldimensions desired in the fabrication of the semiconductor integratedcircuit devices may be realized.

[0076] Also, the volume of the temperature extension unit 50 has beenprimarily described as being approximately the same as the volume of thenozzle unit 30. However, it is understood that the volume of thetemperature extension unit 50 may alternately be more or less than thevolume of the nozzle unit 30. For example, and preferably in combinationwith an improved heat exchanger of the present invention, thetemperature extension unit 50 may be between approximately ¼ to 4 timesthe volume of the nozzle unit 30. Preferably, the temperature controlunit 50 may be between approximately ¾ to 2 times the volume, or mostpreferably about the same volume size as the nozzle unit 30.

[0077] Next, FIG. 7 illustrates another exemplary embodiment of thepresent invention that comprises a nozzle assembly 11 that is adaptableto a TEL MARK VIII E2 nozzle assembly utilizing a preexisting integratedsingle reservoir, e.g., a standard reservoir comprising the originalreservoir as supplied, or a reasonable facsimile thereof to the originalequipment as shown in FIG. 7. FIGS. 8-10 illustrate another arrangementof a heat exchanger assembly 820 that is utilized with the improvednozzle assembly 11 as shown in FIG. 7.

[0078] Specifically, the nozzle assembly 11 as illustrated in FIG. 7, isessentially the same as the nozzle assembly 10 that has been describedwith reference to FIG. 1. However, in FIG. 7, an embodiment of thepresent invention comprises an improved heat exchanger assembly 820. InFIG. 7, only one heat exchanger tubes 802D of a plurality of heatexchanger tubes 802A-D is illustrated in FIG. 7. The improved heatexchanger assembly 820 and the plurality of heat exchanger tubes 802A-Dare more clearly illustrated in FIGS. 8-10.

[0079] As shown in more detail in FIGS. 8-10, the heat exchanger tubeassembly 820 preferably comprises a plurality of heat exchanger tubes802A-D. Specifically, the heat exchanger tube assembly 820, as shown inFIGS. 8-10, comprises four separate heat exchanger tubes 802A-D. Each ofthe plurality of heat exchanger tubes 802A-D preferably comprise anapproximately ⅛ inch diameter tubing. The tubing, for example, maycomprise a Teflon®-like material.

[0080] Suitable temperature control unit input and output ports 804,806, are respectively provided to transport the temperature controlledfluid into the heat exchanger tube assembly 820. The temperature controlliquid achieves a thermal equilibrium with the allocation of chemicaldeveloper that has just been introduced via the developer input ports46, into the nozzle unit interior 38 of the nozzle unit 30. As shown inFIG. 7, an air bleed port 46A is also provided, that is routed to adrain that is not shown. The air bleed port 46A is utilized, e.g., whenfirst introducing the developer.

[0081] As shown in FIGS. 8-10, the temperature controlled fluid inputport 804 provides the temperature controlled fluid to an input manifold840. The input manifold 840 distributes the temperature controlled fluidamong the four heat exchanger tubes 802A-D. Each heat exchanger tube802A-D then provides a unique or separate path, as shown in FIGS. 8 and9, from the input manifold 840 to the output manifold 860. The outputmanifold 860 collects the temperature controlled fluid from each of thefour heat exchanger tubes 802A-D and then exhausts the temperaturecontrolled fluid via the output port 806. The output manifold 860 isclearly illustrated in FIG. 10. Also, the input manifold 840 ispreferably analogous to the output manifold 860.

[0082] As shown in FIGS. 8-10, the heat exchanger tube assembly 820 iscontained within the nozzle unit 30. This improved heat exchangerassembly 820 thus may achieve an improved temperature control of thechemical developer located essentially throughout the entire cavityformed by the interior of the nozzle unit 30. It is also understood thatthe heat exchanger tube assembly 820 provides for an improvedtemperature control of the chemical developer as compared to the priorart heat exchanger tube 302 of FIG. 1. In an embodiment of the presentinvention, for example, by utilizing a smaller diameter tube with asubstantially longer length between the input and output ports 804, 806,an increased surface area contact between the heat exchanger tubesurfaces and the chemical developer is achieved. Thus, embodiments ofthe present invention may achieve thermal equilibrium more rapidly thanwas possible in the prior art as shown in FIG. 1.

[0083] Also, as shown in FIGS. 8-9, a shaping clip 890 is utilized toprovide a relative separation of the plurality of heat exchanger tubes802A-D. As shown in FIGS. 8-9, the same shaping clip 890 may also beutilized to provide both a horizontal separation between the pluralityof heat exchanger tubes 802A-D, and a vertical separation between themultiple loops of a specific heat exchanger tube, for example, heatexchanger tube 802A as shown in FIGS. 8-9.

[0084] Alternately, a plurality of shaping clips 890 may be utilized toprovide either or both the horizontal and vertical separation. Thehorizontal and vertical separation may alternatively be accomplished byutilizing separate shaping clips, or similar devices. The shaping clip890 may comprise, for example, a molded plastic clip-like device.

[0085] In summary, it is also understood that by utilizing embodimentsof this improved heat exchanger tube assembly 320 in combination withthe temperature extension unit 50, that a number of benefits may beachieved. First, in a typical arrangement, the wafers 220 as shown inFIGS. 4A-B are typically approximately 8 inches in diameter. However,with embodiments comprising a combination of the heat exchanger tubeassembly 320 and the temperature extension unit 50, embodiments of thepresent invention may be utilized to provide an adequate temperaturecontrolled chemical developer for wafers that exceed 8 inches indiameter. For example, a wafer of 12 inches in diameter may be utilizedin the fabrication of semi-conductor devices by utilizing this combinedarrangement. In this 12 inch wafer arrangement, the temperatureextension unit 50 may be enlarged to, for example, 120 cc in volume. Inyet other embodiments, the total developer volume that is contained inthe nozzle unit 30 and the temperature extension unit 50 may, forexample, be as much as 300 cc in volume, or even greater.

[0086] This increased volume of chemical developer may be achieved bythe heat exchanger tube assembly 320 being further enlarged in variousalternate embodiments, such that each of the heat exchanger tubes 302A-Dhave, for example, an increased number of loops and/or an increased runlength between the input port manifold 340 and the output manifold 360.These alternate embodiments may provide, e.g., for an increased heatexchanger to developer contact surface area. Thus, an improvedtemperature control of the chemical developer by utilizing thetemperature controlled fluid within the heat exchanger tubes 302A-D,provides for an improved temperature controlled chemical developerdispensation to the wafer, even when the wafer is increased in diametersize.

[0087] The invention has been described in reference to particularembodiments as set forth above. However, only the preferred embodimentof the present invention, and but a few examples of its versatility areshown and described in the present disclosure. It is understood that thepresent invention is capable of use in various other combinations andenvironments, and is capable of changes or modifications within thescope of the inventive concept as expressed herein. Also, manymodifications and alternatives will become apparent to one of skill inthe art without departing from the principles of the invention asdefined by the appended claims.

What is claimed is:
 1. A method of providing a temperature controlleddeveloper utilizing a preexisting integrated single reservoir,comprising the steps of: temperature controlling a first portion ofdeveloper within a temperature controlling developer dispensingreservoir, and temperature controlling a second portion of developerwithin the temperature controlling developer dispensing reservoir, afterdispensing the first portion of developer, providing a heat exchangerassembly that is located adjacent to at least a part of at least one ofthe first and second portions of developer; wherein the heat exchangerassembly occupies a portion of an internal volume defined by thetemperature controlling developer dispensing reservoir, and wherein theheat exchanger assembly comprises a plurality of heat exchangerconduits; providing a temperature controlled fluid to the plurality ofheat exchanger conduits via an inlet manifold, and exhausting thetemperature controlled fluid from the plurality of heat exchangerconduits via an outlet manifold.
 2. A method as recited in claim 1 ,further comprising the steps of: dispensing the temperature controlledfirst portion of developer from the reservoir, and moving at least apart of the second developer portion to the reservoir; and after apre-set time, dispensing the at least a part of the second developerportion.
 3. A method as recited in claim 1 , further comprising the stepof: dispensing the temperature controlled first and second portions ofdeveloper while refilling the temperature controlling developerdispensing reservoir.
 4. A method as recited in claim 2 , wherein: thepre-set time is approximately 23 seconds.
 5. A method as recited inclaim 4 , further comprising the step of: repeatedly dispensing thetemperature controlled first and second portions of developer atperiodic intervals of within approximately three minutes.
 6. A method asrecited in claim 1 , further comprising the step of: repeatedlydispensing the temperature controlled first and second portions ofdeveloper at periodic intervals of within approximately three minutes.7. A method as recited in claim 1 , further comprising the steps of:exposing a photoresist by a deep ultraviolet process, and developing thephotoresist by utilizing the dispensed temperature controlled first andsecond portions of developer.
 8. A method as recited in claim 1 ,further comprising the step of: performing a double puddle developmentprocess.
 9. A method as recited in claim 1 , wherein the second portionis approximately the same volume as the first portion.
 10. A method asrecited in claim 1 , wherein the volume of each of the first and secondportions is between approximately 30 and 120 cubic centimeters.
 11. Amethod as recited in claim 1 , wherein the volume of each of the firstand second portions is approximately 60 cubic centimeters.
 12. A methodof supplying a developer to a photoresist, utilizing a preexistingintegrated single reservoir, comprising the steps of: introducing adeveloper into a reservoir, temperature controlling the developer withinthe reservoir by utilizing a plurality of temperature heat exchangeconduits, dispensing a first volumetric allocation of the developer ontoa semiconductor wafer that has been previously coated with a photoresistand patterned, wherein the first volumetric allocation is approximatelyall of the reservoir volume, simultaneous with the dispensing a firstvolumetric allocation step, introducing additional developer into thereservoir sufficient to replace the dispensed developer, temperaturecontrolling the remaining developer and the additional developer for apre-set period of time, and dispensing a second volumetric allocation ofthe developer onto the semiconductor wafer. providing a heat exchangerassembly that is located adjacent to at least a part of at least one ofthe first and second volumetric allocations of developer; wherein theheat exchanger assembly occupies a portion of an internal volume definedby the temperature controlling developer dispensing reservoir, andwherein the heat exchanger assembly comprises a plurality of heatexchanger conduits; providing a temperature controlled fluid to theplurality of heat exchanger conduits via an inlet manifold, exhaustingthe temperature controlled fluid from the plurality of heat exchangerconduits via an outlet manifold, and utilizing the heat exchangerassembly so that the first and second volumetric allocation of developermay be issued so that both may be dispensed within a relatively shortperiod of time upon the photoresist layer surface in a temperaturecontrolled state.
 13. A method as recited in claim 12 , wherein thesecond portion is approximately the same volume as the first portion.14. A method as recited in claim 12 , wherein the dispensed first andsecond portions are each approximately 60 cubic centimeters in volume.15. A method as recited in claim 12 , wherein the volume of each of thedispensed first and second portions is between approximately 30 and 120cubic centimeters.
 16. A semiconductor developer nozzle apparatus,utilizing a preexisting integrated single reservoir, comprising: atemperature controlled developer reservoir, and a temperature controlleddeveloper dispenser, a heat exchanger unit for providing a temperaturecontrol for a temperature controlled first and second portions ofdeveloping, wherein the temperature controlled developer dispenser isutilized for dispensing the temperature controlled first and secondportions of developer, the temperature controlled first and secondportions of developer are obtained from the temperature controlleddeveloper reservoir, after the dispensing of the temperature controlledfirst portion of developer, the temperature controlled second portion ofdeveloper is temperature controlled and contained by the temperaturecontrolled developer reservoir, wherein the heat exchanger assembly islocated adjacent to at least a part of at least one of the first andsecond portions of developer; wherein the heat exchanger assemblyoccupies a portion of an internal volume defined by the temperaturecontrolling developer dispensing reservoir, and wherein the heatexchanger assembly comprises a plurality of heat exchanger conduits; atemperature controlled fluid is provided to the plurality of heatexchanger conduits via an inlet manifold, and the temperature controlledfluid is exhausted from the plurality of heat exchanger conduits via anoutlet manifold.
 17. An apparatus as recited in claim 16 , wherein thetemperature controlled first and second portions of developer aredispensed while constantly refilling the temperature controlleddeveloper reservoir.
 18. An apparatus as recited in claim 16 , whereinthe temperature controlled first and second portions of developer aredispensed within approximately 30 seconds of each other.
 19. Anapparatus as recited in claim 18 , wherein the dispensing of thetemperature controlled first and second portions of developer arerepeated at periodic intervals of within approximately three minutes.20. An apparatus as recited in claim 16 , wherein the temperaturecontrolled first and second portions of developer are utilized todevelop a photoresist that has been exposed by a deep ultravioletprocess.
 21. An apparatus as recited in claim 16 , wherein the secondportion is approximately the same volume as the first portion.
 22. Anapparatus as recited in claim 16 , wherein the volume of each of thefirst and second portions is between approximately 30 and 120 cubiccentimeters.
 23. An apparatus as recited in claim 16 , wherein thevolume of each of the first and second portions is approximately 60cubic centimeters.
 24. A device for dispensing a temperature controlledphotoresist developer, utilizing a preexisting integrated singlereservoir, comprising: a dispensing nozzle unit, a temperature controldevice comprising a plurality of heat exchanger conduits, forcontrolling a first portion of developer together with a second portionof developer, wherein after a dispensing of the temperature controlledfirst portion of developer, the temperature controlled second portion ofdeveloper is temperature controlled by the temperature control devicefor temperature controlling the first and second portions of developer,wherein the temperature control device is located adjacent to at least apart of at least one of the first and second portions of developer;wherein the temperature control device occupies a portion of an internalvolume defined by the temperature controlling developer dispensingreservoir, and wherein the temperature control device comprises aplurality of heat exchanger conduits; wherein a temperature controlledfluid is provided to the plurality of heat exchanger conduits via aninlet manifold, and the temperature controlled fluid is exhausted fromthe plurality of heat exchanger conduits via an outlet manifold.
 25. Adevice as recited in claim 24 , wherein the temperature controlled firstand second portions of developer are dispensed within approximately 30seconds or less of each other.
 26. A device as recited in claim 25 ,further comprising: the dispensing of both of the temperature controlledfirst and second portions of developer are repeated at periodicintervals of within approximately three minutes.
 27. A device as recitedin claim 24 , wherein the temperature controlled first and secondportions of developer are dispensed to develop a photoresist that hasbeen exposed by a deep ultraviolet process.
 28. A device as recited inclaim 24 , wherein the second portion is approximately the same volumeas the first portion.
 29. A device as recited in claim 24 , wherein thevolume of each of the first and second portions is between approximately30 and 120 cubic centimeters.
 30. A device as recited in claim 24 ,wherein the volume of each of the first and second portions isapproximately 60 cubic centimeters.
 31. A method of providing atemperature controlled developer utilizing a dispensing nozzle with apreexisting integrated single reservoir, for a development of asemiconductor photoresist, comprising the steps of: temperaturecontrolling a developer allocation, the allocation comprising aplurality of portions, the temperature controlling utilizing a pluralityof heat exchanger conduits, dispensing a first portion of thetemperature controlled developer allocation, and dispensing a secondportion of the temperature controlled developer allocation, wherein thesecond portion of the temperature controlled developer allocation istemperature controlled after the dispensing of the first portion of thetemperature controlled developer allocation, wherein the temperaturecontrolling is provided by a heat exchanger assembly that is locatedadjacent to at least a part of at least one of the first and secondportions of developer; wherein the heat exchanger assembly occupies aportion of an internal volume defined by the temperature controllingdeveloper dispensing reservoir, providing a temperature controlled fluidto the plurality of heat exchanger conduits via an inlet manifold, andexhausting the temperature controlled fluid from the plurality of heatexchanger conduits via an outlet manifold.
 32. A method as recited inclaim 31 , further comprising the step of: dispensing the first andsecond portions of the temperature controlled developer allocationwithin approximately 30 seconds of each other.
 33. A method as recitedin claim 32 , further comprising the step of: repeating the steps ofdispensing the first and second portions of the temperature controlleddeveloper allocation at periodic intervals of within approximately threeminutes.
 34. A method as recited in claim 31 , further comprising thestep of: repeating the steps of dispensing the first and second portionsof the temperature controlled developer allocation at periodicintervals.
 35. A method as recited in claim 31 , further comprising thesteps of: exposing the photoresist by a deep ultraviolet process, anddeveloping the photoresist by utilizing the dispensed first and secondportions of the temperature controlled developer allocation.
 36. Amethod as recited in claim 31 , further comprising the step of:performing a double puddle development process that comprises utilizingthe dispensed first and second portions of the temperature controlleddeveloper allocation.
 37. A method as recited in claim 31 , wherein thesecond portion is approximately the same volume as the first portion.38. A method as recited in claim 31 , wherein the volume of each of thefirst and second portions is between approximately 30 and 120 cubiccentimeters.
 39. A method as recited in claim 31 , wherein the volume ofeach of the first and second portions is approximately 60 cubiccentimeters.
 40. An apparatus for supplying a developer to aphotoresist, utilizing a preexisting integrated single reservoir,comprising: a developer reservoir for containing a developer that hasbeen introduced, a temperature controlling heat exchanger deviceoperating with the developer reservoir to temperature control theintroduced developer, a dispensing device dispenses a first portion ofthe developer onto a semiconductor that has been previously coated witha photoresist and patterned, the first portion being approximately allof the reservoir volume, wherein simultaneous with the dispensing of thefirst portion of developer, additional developer is introduced into thereservoir approximately sufficient to replace the dispensed firstportion of developer, wherein the temperature controlling devicetemperature controls the remaining developer and the additionaldeveloper for a pre-set period of time, and wherein the dispensingdevice dispenses a second portion of the developer onto saidsemiconductor, the heat exchanger assembly is located adjacent to atleast a part of at least one of the first and second portions ofdeveloper; wherein the heat exchanger assembly occupies a portion of aninternal volume defined by the temperature controlling developerdispensing reservoir, and wherein the heat exchanger assembly comprisesa plurality of heat exchanger conduits; a temperature controlled fluidis provided to the plurality of heat exchanger conduits via an inletmanifold, and the temperature controlled fluid is exhausted from theplurality of heat exchanger conduits via an outlet manifold.
 41. Anapparatus as recited in claim 40 , wherein the second portion isapproximately the same volume as the first portion.
 42. An apparatus asrecited in claim 40 , wherein the volume of each of the first and secondportions is between approximately 30 and 120 cubic centimeters.
 43. Anapparatus as recited in claim 40 , wherein the volume of each of thefirst and second portions is approximately 60 cubic centimeters.
 44. Amethod for supplying a developer to a photoresist, utilizing apreexisting integrated single reservoir, comprising: providing thepreexisting integrated single reservoir with a nozzle unit and a nozzlecap of a nozzle assembly, providing a modified heat exchanger assemblythat further comprises a plurality of heat exchanger tubes, providing atemperature control liquid via an input port to the heat exchangertubes, wherein each of the plurality of heat exchanger tubes arepreferably held in place by at least one shaping clip, utilizing amanifold device to distribute the temperature control liquid from theinput port to the plurality of heat exchanger tubes, collecting thetemperature control liquid from each of the plurality of heat exchangertubes in an exhaust manifold, after the temperature control liquidpasses through each of the plurality of heat exchanger tubes, exhaustingthe temperature control liquid via a temperature control output port,providing a first volumetric allocation of developer and a secondvolumetric allocation of developer, temperature controlling the secondallocation of developer, after the dispensation of the first allocation,and dispensing both allocations within a relatively short period of timeupon a photoresist layer surface in a relatively temperature controlledstate.
 45. A method as recited in claim 44 , wherein the preexistingintegrated single reservoir, the nozzle unit, and the nozzle cap of thenozzle assembly comprises at least a portion of a Tokyo Electron Limited(“TEL”) Track semiconductor wafer coater system.
 46. An apparatus forsupplying a developer to a photoresist, utilizing a preexistingintegrated single reservoir, comprising: a preexisting integrated singlereservoir is provided with a nozzle unit and a nozzle cap of a nozzleassembly, modified heat exchanger assembly that further comprises aplurality of heat exchanger tubes, wherein a temperature control liquidis provided via an input port to the heat exchanger tubes, wherein eachof the plurality of heat exchanger tubes are preferably held in place byat least one shaping clip, a manifold device that is utilized todistribute the temperature control liquid from the input port to theplurality of heat exchanger tubes, an exhaust manifold for collectingthe temperature control liquid from each of the plurality of heatexchanger tubes into the exhaust manifold, after the temperature controlliquid passes through each of the plurality of heat exchanger tubes, atemperature control output port for exhausting the temperature controlliquid, and wherein a second volumetric allocation of developer istemperature controlled, after the dispensation of the first allocation,and wherein both allocations are dispensed within a relatively shortperiod of time upon a semiconductor wafer photoresist layer surface in arelatively temperature controlled state,
 47. An apparatus as recited inclaim 46 , wherein the preexisting integrated single reservoir, thenozzle unit, the nozzle unit and the nozzle cap of the nozzle assemblycomprises at least a portion of a Tokyo Electron Limited (“TEL”) Tracksemiconductor wafer coater system.